Technical parameters/dissipated power: 157 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/rise time: 51 ns
Technical parameters/Input capacitance (Ciss): 2020pF @25V(Vds)
Technical parameters/rated power (Max): 157 W
Technical parameters/descent time: 33 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 157W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF1404PBF
|
Infineon | 功能相似 | TO-220-3 |
INTERNATIONAL RECTIFIER IRF1404PBF 场效应管, N 通道, MOSFET, 202A, TO-220AB 新
|
||
IRF1404PBF
|
International Rectifier | 功能相似 | TO-220-3 |
INTERNATIONAL RECTIFIER IRF1404PBF 场效应管, N 通道, MOSFET, 202A, TO-220AB 新
|
||
|
|
NXP | 类似代替 | TO-220-3 |
N沟道的TrenchMOS标准水平FET N-channel TrenchMOS standard level FET
|
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