Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 625 mW |
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Technical parameters/DC current gain (hFE): | 30 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-92 |
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Dimensions/Packaging: | TO-92 |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 功能相似 | CASE 29-11 |
Trans GP BJT NPN 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
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Motorola | 功能相似 |
Trans GP BJT NPN 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
|
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BC337-40
|
NXP | 功能相似 | TO-92-3 |
Trans GP BJT NPN 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
|
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BC337-40
|
Allied Components | 功能相似 |
Trans GP BJT NPN 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
|
|||
BC33725BU
|
Rochester | 功能相似 | TO-92 |
ON Semiconductor BC33725BU , NPN 晶体管, 800mA, Vce=50 V, HFE:60, 100 MHz, 3引脚 TO-92封装
|
||
BC33725TA
|
ON Semiconductor | 功能相似 | TO-226-3 |
ON Semiconductor BC33725TA , NPN 晶体管, 800mA, Vce=45 V, HFE:100, 100 MHz, 3引脚 TO-92封装
|
||
KSP2907ABU
|
Fairchild | 功能相似 | TO-226-3 |
PNP 晶体管，60 至 160V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
MPSA64
|
Fairchild | 类似代替 | TO-92-3 |
NTE ELECTRONICS MPSA64 Bipolar (BJT) Single Transistor, PNP, -30V, 125MHz, 1.5W, -300mA, 50 hFE
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