Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -1.20 A
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 20000 @100mA, 5V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 125MHz (Min)
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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ON Semiconductor | 功能相似 | CASE 29-11 |
Trans GP BJT NPN 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
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Motorola | 功能相似 |
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BC337-40
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NXP | 功能相似 | TO-92-3 |
Trans GP BJT NPN 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
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BC337-40
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Trans GP BJT NPN 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
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BC33725BU
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Rochester | 功能相似 | TO-92 |
ON Semiconductor BC33725BU , NPN 晶体管, 800mA, Vce=50 V, HFE:60, 100 MHz, 3引脚 TO-92封装
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BC33725TA
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ON Semiconductor | 功能相似 | TO-226-3 |
ON Semiconductor BC33725TA , NPN 晶体管, 800mA, Vce=45 V, HFE:100, 100 MHz, 3引脚 TO-92封装
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