Technical parameters/frequency: | 300 MHz |
|
Technical parameters/number of pins: | 3 |
|
Technical parameters/dissipated power: | 625 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 40 V |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 10V |
|
Technical parameters/rated power (Max): | 625 mW |
|
Technical parameters/DC current gain (hFE): | 35 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 625 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Length: | 5.2 mm |
|
Dimensions/Width: | 4.19 mm |
|
Dimensions/Height: | 5.33 mm |
|
Dimensions/Packaging: | TO-226-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | power management |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PN2222ABU
|
ON Semiconductor | 完全替代 | TO-226-3 |
ON Semiconductor PN2222ABU , NPN 晶体管, 1 A, Vce=40 V, HFE:35, 300 MHz, 3引脚 TO-92封装
|
||
PN2222AG
|
UTC | 完全替代 | TO-92 |
通用晶体管NPN硅 General Purpose Transistors NPN Silicon
|
||
PN2222ATA
|
Fairchild | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR PN2222ATA 单晶体管 双极, NPN, 40 V, 300 MHz, 625 mW, 1 A, 300 hFE
|
||
PN2222ATA
|
ON Semiconductor | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR PN2222ATA 单晶体管 双极, NPN, 40 V, 300 MHz, 625 mW, 1 A, 300 hFE
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review