Technical parameters/rated power: | 0.35 W |
|
Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 45 V |
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Technical parameters/Maximum allowable collector current: | 0.1A |
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Technical parameters/minimum current amplification factor (hFE): | 120 @2mA, 5V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23 |
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Dimensions/Packaging: | SOT-23 |
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Other/Product Lifecycle: | End of Life |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCW69,215
|
NXP | 功能相似 | SOT-23-3 |
晶体管 双极-射频, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 260 hFE
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Nexperia | 功能相似 |
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Philips | 功能相似 | SOT-23 |
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Leshan Radio | 功能相似 |
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Fairchild | 功能相似 | SOT-23-3 |
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Central Semiconductor | 功能相似 |
Surface mount Si-Epitaxial PlanarTransistors
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VISHAY | 功能相似 |
Surface mount Si-Epitaxial PlanarTransistors
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BCX71H
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NXP | 功能相似 | SOT-23 |
Surface mount Si-Epitaxial PlanarTransistors
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|
Nexperia | 功能相似 | TO-236 |
Surface mount Si-Epitaxial PlanarTransistors
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BCX71H
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Siemens AG | 功能相似 | SOT-23 |
Surface mount Si-Epitaxial PlanarTransistors
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BCX71H
|
Philips | 功能相似 | TO-236 |
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