Technical parameters/rated voltage (DC): | 40.0 V |
|
Technical parameters/rated current: | 50.0 mA |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 625 mW |
|
Technical parameters/drain source voltage (Vds): | 40.0 V |
|
Technical parameters/Continuous drain current (Ids): | 12.0 mA |
|
Technical parameters/breakdown voltage: | 40 V |
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Technical parameters/Input capacitance (Ciss): | 16pF @15V(Vds) |
|
Technical parameters/rated power (Max): | 625 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 625 mW |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Length: | 5.2 mm |
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Dimensions/Width: | 4.19 mm |
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Dimensions/Height: | 5.33 mm |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/06/15 |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PF5102
|
ON Semiconductor | 类似代替 | TO-92-3 |
晶体管, JFET, JFET, -40 V, 4 mA, 20 mA, -1.6 V, TO-92, JFET
|
||
PF5102
|
Fairchild | 类似代替 | TO-226-3 |
晶体管, JFET, JFET, -40 V, 4 mA, 20 mA, -1.6 V, TO-92, JFET
|
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