Technical parameters/dissipated power: | 625 mW |
|
Technical parameters/breakdown voltage: | 40 V |
|
Technical parameters/Input capacitance (Ciss): | 16pF @15V(Vds) |
|
Technical parameters/rated power (Max): | 625 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 625 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-92-3 |
|
Dimensions/Packaging: | TO-92-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bag |
|
Other/Manufacturing Applications: | Power management, signal processing |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PF5102
|
ON Semiconductor | 类似代替 | TO-92-3 |
晶体管, JFET, JFET, -40 V, 4 mA, 20 mA, -1.6 V, TO-92, JFET
|
||
PF5102
|
Fairchild | 类似代替 | TO-226-3 |
晶体管, JFET, JFET, -40 V, 4 mA, 20 mA, -1.6 V, TO-92, JFET
|
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