Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 0.25 W |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 500mA |
|
Technical parameters/minimum current amplification factor (hFE): | 70 @50mA, 5V |
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Technical parameters/rated power (Max): | 250 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 250 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
Customs Information/Hong Kong Import and Export License: | NLR |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PDTD113ET,215
|
Nexperia | 类似代替 | SOT-23-3 |
NXP PDTD113ET,215 晶体管, BRT, NPN, 50V, 500MA, 1KΩ
|
||
PDTD113ET,215
|
NXP | 类似代替 | SOT-23-3 |
NXP PDTD113ET,215 晶体管, BRT, NPN, 50V, 500MA, 1KΩ
|
||
PDTD113ZT,215
|
Nexperia | 功能相似 | SOT-23-3 |
Nexperia PDTD113ZT,215 NPN 数字晶体管, 500 mA, Vce=50 V, 1 kΩ, 电阻比:0.1, 3引脚 SOT-23 (TO-236AB)封装
|
||
PDTD113ZT,215
|
NXP | 功能相似 | SOT-23-3 |
Nexperia PDTD113ZT,215 NPN 数字晶体管, 500 mA, Vce=50 V, 1 kΩ, 电阻比:0.1, 3引脚 SOT-23 (TO-236AB)封装
|
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