Technical parameters/dissipated power: | 250 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/minimum current amplification factor (hFE): | 70 @50mA, 5V |
|
Technical parameters/rated power (Max): | 250 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 250 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Length: | 3 mm |
|
Dimensions/Width: | 1.4 mm |
|
Dimensions/Height: | 1 mm |
|
Dimensions/Packaging: | SOT-23-3 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PDTD113ET,215
|
Nexperia | 类似代替 | SOT-23-3 |
NXP PDTD113ET,215 晶体管, BRT, NPN, 50V, 500MA, 1KΩ
|
||
PDTD113ET,215
|
NXP | 类似代替 | SOT-23-3 |
NXP PDTD113ET,215 晶体管, BRT, NPN, 50V, 500MA, 1KΩ
|
||
PDTD113ZT,215
|
Nexperia | 功能相似 | SOT-23-3 |
Nexperia PDTD113ZT,215 NPN 数字晶体管, 500 mA, Vce=50 V, 1 kΩ, 电阻比:0.1, 3引脚 SOT-23 (TO-236AB)封装
|
||
PDTD113ZT,215
|
NXP | 功能相似 | SOT-23-3 |
Nexperia PDTD113ZT,215 NPN 数字晶体管, 500 mA, Vce=50 V, 1 kΩ, 电阻比:0.1, 3引脚 SOT-23 (TO-236AB)封装
|
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