Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 0.25 W |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 100mA |
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Technical parameters/minimum current amplification factor (hFE): | 100 @5mA, 5V |
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Technical parameters/rated power (Max): | 250 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 250 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 3 mm |
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Dimensions/Width: | 1.4 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Power Management, Automotive, Industrial |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTC114EET1G
|
ON Semiconductor | 功能相似 | SC-75-3 |
ON SEMICONDUCTOR DTC114EET1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率, SOT-416
|
||
MMUN2211LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMUN2211LT1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率, SOT-23
|
||
PDTC114YT,215
|
NXP | 类似代替 | SOT-23-3 |
双电阻器数字 NPN 晶体管，Nexperia ### 数字晶体管，Nexperia 配备电阻器的双极性晶体管也称为数字晶体管或偏流电阻器的晶体管，包含一个或两个集成电阻器。 单一系列输入电阻器，或两个电阻器的分压器能直接从数字源驱动这些设备。 提供单和双晶体管型号。
|
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