Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/rated power: 246 mW
Technical parameters/halogen-free state: Halogen Free
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 246 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 35 @5mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 35
Technical parameters/rated power (Max): 246 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 400 mW
Technical parameters/power supply voltage: 1.8 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.94 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Portable Equipment, Automotive, Industrial, Power Management, Portable Devices, Consumer Electronics, Industrial, Power Management, Consumer Electronics, Automotive
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMUN2211LT3
|
ON Semiconductor | 类似代替 | SOT-23-3 |
偏置电阻晶体管 Bias Resistor Transistor
|
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