Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 250 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 20mA |
|
Technical parameters/minimum current amplification factor (hFE): | 80 @5mA, 5V |
|
Technical parameters/rated power (Max): | 250 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 250 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-883 |
|
Dimensions/Height: | 0.47 mm |
|
Dimensions/Packaging: | SOT-883 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PDTA115EM,315
|
NXP | 类似代替 | SOT-883 |
TRANS PNP W/RES 50V SOT-883
|
||
PDTA115EM,315
|
Nexperia | 类似代替 | SOT-883 |
TRANS PNP W/RES 50V SOT-883
|
||
PDTA115ET,215
|
NXP | 完全替代 | SOT-23-3 |
NXP PDTA115ET,215 单晶体管 双极, BRT, PNP, -50 V, 250 mW, -20 mA, 80 hFE
|
||
PDTA115EU,115
|
NXP | 功能相似 | SOT-323-3 |
Nexperia PDTA115EU,115 PNP 数字晶体管, 0.02 A, Vce=50 V, 100 kΩ, 电阻比:1, 3引脚 UMT封装
|
||
PDTA115EU,115
|
Nexperia | 功能相似 | SOT-323-3 |
Nexperia PDTA115EU,115 PNP 数字晶体管, 0.02 A, Vce=50 V, 100 kΩ, 电阻比:1, 3引脚 UMT封装
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review