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Model PDTA115TT
Description NXP ### Digital transistors, NXP bipolar transistors equipped with resistors, also known as digital transistors or bias resistors, contain one or two integrated resistors. A single series input resistor, or a voltage divider with two resistors, can directly drive these devices from a digital source. Provide single and dual transistor models.
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Brand: NXP
Packaging TO-236
Delivery time
Packaging method
Standard packaging quantity 1
0.12  yuan 0.12yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3599) Minimum order quantity(1)
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Technical parameters/polarity:

PNP

 

Technical parameters/breakdown voltage (collector emitter):

50 V

 

Technical parameters/Maximum allowable collector current:

100mA

 

Technical parameters/minimum current amplification factor (hFE):

100

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-236

 

Dimensions/Length:

3 mm

 

Dimensions/Width:

1.4 mm

 

Dimensions/Height:

1 mm

 

Dimensions/Packaging:

TO-236

 

Other/Product Lifecycle:

Unknown

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PDTA115EM,315 PDTA115EM,315 NXP 功能相似 SOT-883
TRANS PNP W/RES 50V SOT-883
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TRANS PNP W/RES 50V SOT-883
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NXP PDTA115ET 单晶体管 双极, BRT, PNP, 50 V, 250 mW, 100 mA, 80 hFE
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PDTA115ET PDTA115ET NXP 功能相似 SOT-23
NXP PDTA115ET 单晶体管 双极, BRT, PNP, 50 V, 250 mW, 100 mA, 80 hFE
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PDTA115ET PDTA115ET Nexperia 功能相似 SOT-23
NXP PDTA115ET 单晶体管 双极, BRT, PNP, 50 V, 250 mW, 100 mA, 80 hFE
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PDTA115ET,215 PDTA115ET,215 NXP 功能相似 SOT-23-3
NXP PDTA115ET,215 单晶体管 双极, BRT, PNP, -50 V, 250 mW, -20 mA, 80 hFE
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