Technical parameters/frequency: | 500 MHz |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 79.0 W |
|
Technical parameters/Leakage source breakdown voltage: | 40.0 V |
|
Technical parameters/breakdown voltage of gate source: | ±20.0 V |
|
Technical parameters/Continuous drain current (Ids): | 7.00 A |
|
Technical parameters/output power: | 25 W |
|
Technical parameters/gain: | 14.5 dB |
|
Technical parameters/test current: | 200 mA |
|
Technical parameters/rated voltage: | 40 V |
|
Encapsulation parameters/Encapsulation: | PowerSO-10 |
|
Dimensions/Packaging: | PowerSO-10 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PD55025-E
|
ST Microelectronics | 功能相似 | PowerSO-10RF |
LDMOST 系列 N沟道 增强模式 射频 功率晶体管 PowerSO-10RF
|
||
|
|
ETC1 | 类似代替 |
RF功率晶体管的LDMOST塑料系列 RF POWER TRANSISTORS The LdmoST Plastic FAMILY
|
|||
PD55025S
|
ST Microelectronics | 类似代替 | PowerSO-10-4 |
RF功率晶体管的LDMOST塑料系列 RF POWER TRANSISTORS The LdmoST Plastic FAMILY
|
||
PD55025S-E
|
ST Microelectronics | 功能相似 | PowerSO-10RF |
RF功率晶体管, LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
|
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