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Model PBSS8110T,215

Description Low saturation voltage NPN transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia

Brand: Nexperia

Packaging SOT-23-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(7227) Minimum order quantity(1)

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Technical parameters/frequency:	100 MHz
Technical parameters/rated power:	0.3 W
Technical parameters/number of pins:	3
Technical parameters/dissipated power:	0.48 W
Technical parameters/breakdown voltage (collector emitter):	100 V
Technical parameters/minimum current amplification factor (hFE):	150 @250mA, 10V
Technical parameters/rated power (Max):	480 mW
Technical parameters/DC current gain (hFE):	150
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	480 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23-3
Dimensions/Length:	3 mm
Dimensions/Width:	1.4 mm
Dimensions/Height:	1 mm
Dimensions/Packaging:	SOT-23-3
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Motor drive and control, communication and networking, consumer electronics, power management, lighting, industrial, automotive applications
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	lead-free

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