Technical parameters/number of pins: | 3 |
|
Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 300 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 100 V |
|
Technical parameters/Maximum allowable collector current: | 1A |
|
Technical parameters/DC current gain (hFE): | 150 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23 |
|
Dimensions/Packaging: | SOT-23 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Other/Manufacturing Applications: | Power Management, Lighting, Industrial, Consumer Electronics, Automotive, Motor Drive & Control, Communications & Networking |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS8110D,115
|
Nexperia | 类似代替 | TSOP-6 |
TSOP NPN 100V 1A
|
||
PBSS8110D,115
|
NXP | 类似代替 | TSOP-6 |
TSOP NPN 100V 1A
|
||
PBSS8110S
|
NXP | 类似代替 | SPT |
100 V ,1 A NPN低VCEsat晶体管( BISS )晶体管 100 V, 1 A NPN low VCEsat (BISS) transistor
|
||
PBSS8110T,215
|
Nexperia | 完全替代 | SOT-23-3 |
NXP PBSS8110T,215 单晶体管 双极, NPN, 100 V, 100 MHz, 300 mW, 1 A, 150 hFE
|
||
PBSS8110X
|
Nexperia | 功能相似 | SOT-89 |
NXP PBSS8110X 单晶体管 双极, NPN, 100 V, 100 MHz, 2 W, 1 A, 150 hFE
|
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