Technical parameters/polarity: | PNP |
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Technical parameters/breakdown voltage (collector emitter): | 60 V |
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Technical parameters/Maximum allowable collector current: | 1A |
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Technical parameters/minimum current amplification factor (hFE): | 85 @1A, 2V |
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Technical parameters/rated power (Max): | 325 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | XDFN-3 |
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Dimensions/Packaging: | XDFN-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS5160QA
|
Nexperia | 完全替代 | XDFN-3 |
NXP PBSS5160QA 单晶体管 双极, AEC-Q101, PNP, -60 V, 150 MHz, 325 mW, -1 A, 85 hFE
|
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