Technical parameters/breakdown voltage (collector emitter): | 60 V |
|
Technical parameters/minimum current amplification factor (hFE): | 85 @1A, 2V |
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Technical parameters/rated power (Max): | 325 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | XDFN-3 |
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Dimensions/Packaging: | XDFN-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS5160QAZ
|
Nexperia | 类似代替 | SOT-1215-3 |
单晶体管 双极, AEC-Q101, PNP, -60 V, 150 MHz, 325 mW, -1 A, 85 hFE
|
||
PBSS5160QAZ
|
NXP | 类似代替 | XDFN-3 |
单晶体管 双极, AEC-Q101, PNP, -60 V, 150 MHz, 325 mW, -1 A, 85 hFE
|
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