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Model PBSS4240V
Description NPN Transistors, NXP series of NXP BISS (small signal breakthrough) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, NXP Semiconductors
Product QR code
Brand: NXP
Packaging SOT-666
Delivery time
Packaging method
Standard packaging quantity 1
0.94  yuan 0.94yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8485) Minimum order quantity(1)
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Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

1.2 W

 

Technical parameters/breakdown voltage (collector emitter):

40 V

 

Technical parameters/Maximum allowable collector current:

2A

 

Technical parameters/minimum current amplification factor (hFE):

75

 

Technical parameters/DC current gain (hFE):

300

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

1200 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

SOT-666

 

Dimensions/Length:

1.7 mm

 

Dimensions/Width:

1.3 mm

 

Dimensions/Height:

0.6 mm

 

Dimensions/Packaging:

SOT-666

 

Other/Product Lifecycle:

Unknown

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standard/REACH SVHC version:

2015/12/17

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PBSS4240V,115 PBSS4240V,115 Nexperia 功能相似 SOT-666
SOT-666 NPN 40V 2A
PDF
PBSS4240V,115 PBSS4240V,115 NXP 功能相似 SOT-563
SOT-666 NPN 40V 2A
PDF

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