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Model PBSS4350Z,135

Description NXP PBSS4350Z,135 Single transistor bipolar, NPN, 50 V, 100 MHz, 1.35 W, 3 A, 200 hFE

Brand: NXP

Packaging TO-261-4

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/frequency:	100 MHz
Technical parameters/number of pins:	4
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	1.35 W
Technical parameters/breakdown voltage (collector emitter):	50 V
Technical parameters/Maximum allowable collector current:	3A
Technical parameters/minimum current amplification factor (hFE):	100 @2A, 2V
Technical parameters/rated power (Max):	2 W
Technical parameters/DC current gain (hFE):	200
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	2000 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	TO-261-4
Dimensions/Length:	6.7 mm
Dimensions/Width:	3.7 mm
Dimensions/Height:	1.7 mm
Dimensions/Packaging:	TO-261-4
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Signal Processing, Consumer Electronics, Power Management, Lighting, Motor Drive & Control, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

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