Technical parameters/frequency: | 280 MHz |
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Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 0.2 W |
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Technical parameters/breakdown voltage (collector emitter): | 15 V |
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Technical parameters/Maximum allowable collector current: | 0.5A |
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Technical parameters/minimum current amplification factor (hFE): | 150 @100mA, 2V |
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Technical parameters/maximum current amplification factor (hFE): | 200 @10mA, 2V |
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Technical parameters/rated power (Max): | 200 mW |
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Technical parameters/dissipated power (Max): | 200 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-563 |
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Dimensions/Packaging: | SOT-563 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS3515VS
|
Nexperia | 功能相似 | SSMini |
PNP 晶体管,NXP 一系列 NXP BISS(小信号的重大突破)低饱和电压 PNP 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量,采用紧凑的空间节省型封装。 这些晶体管减少损失,可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管,NXP Semiconductors
|
||
PBSS3515VS,115
|
NXP | 功能相似 | SOT-563 |
Nexperia PBSS3515VS,115, 双 PNP 晶体管, 500 mA, Vce=15 V, HFE:90, 280 MHz, 6引脚 SSMini封装
|
||
PBSS3515VS,115
|
Nexperia | 功能相似 | SOT-666 |
Nexperia PBSS3515VS,115, 双 PNP 晶体管, 500 mA, Vce=15 V, HFE:90, 280 MHz, 6引脚 SSMini封装
|
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