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Model PBSS3515VS
Description Low saturation voltage PNP transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage PNP bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia
Product QR code
Brand: Nexperia
Packaging SSMini
Delivery time
Packaging method
Standard packaging quantity 1
2.25  yuan 2.25yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4888) Minimum order quantity(1)
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Technical parameters/minimum current amplification factor (hFE):

90

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

200 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

SSMini

 

Dimensions/Length:

1.7 mm

 

Dimensions/Width:

1.3 mm

 

Dimensions/Height:

0.6 mm

 

Dimensions/Packaging:

SSMini

 

Other/Product Lifecycle:

Active

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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