Technical parameters/rated voltage (DC): | 800 V |
|
Technical parameters/rated current: | 5.80 A |
|
Technical parameters/drain source resistance: | 1.95 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 158 W |
|
Technical parameters/threshold voltage: | 5 V |
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Technical parameters/drain source voltage (Vds): | 800 V |
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Technical parameters/Leakage source breakdown voltage: | 800 V |
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Technical parameters/breakdown voltage of gate source: | ±30.0 V |
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Technical parameters/Continuous drain current (Ids): | 5.80 A |
|
Technical parameters/Input capacitance (Ciss): | 1500pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 158 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/dissipated power (Max): | 158W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Rail, Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
Compliant with standard/REACH SVHC version: | 2015/06/15 |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP5NK80Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™ SuperMESH™，700V 至 1200V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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