Technical parameters/rated voltage (DC): | 62.0 V |
|
Technical parameters/rated current: | 1.00 A |
|
Technical parameters/number of output interfaces: | 1 |
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Technical parameters/drain source resistance: | 750 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 40 W |
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Technical parameters/drain source voltage (Vds): | 59 V |
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Technical parameters/Leakage source breakdown voltage: | 62.0 V |
|
Technical parameters/breakdown voltage of gate source: | ±10.0 V |
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Technical parameters/Continuous drain current (Ids): | 1.00 A |
|
Technical parameters/rise time: | 4 ns |
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Technical parameters/descent time: | 3 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Length: | 10.28 mm |
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Dimensions/Width: | 4.82 mm |
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Dimensions/Height: | 9.28 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -50℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MLP1N06CLG
|
ON Semiconductor | 类似代替 | TO-220-3 |
MOSFET N-CH 1A 62V TO-220AB
|
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