Technical parameters/rated voltage (DC): | 62.0 V |
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Technical parameters/rated current: | 1.00 A |
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Technical parameters/number of output interfaces: | 1 |
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Technical parameters/drain source resistance: | 750 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 40.0 W |
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Technical parameters/Leakage source breakdown voltage: | 62.0 V |
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Technical parameters/breakdown voltage of gate source: | ±10.0 V |
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Technical parameters/Continuous drain current (Ids): | 1.00 A |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -50℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MLP1N06CL
|
ON Semiconductor | 类似代替 | TO-220-3 |
SMARTDISCRETES TM MOSFET 1安培, 62伏特,逻辑电平N沟道TO- 220 SMARTDISCRETES TM MOSFET 1 Amp, 62 Volts, Logic Level N-Channel TO-220
|
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