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Model NZT605

Description NPN Transistors, Fairchild Semiconductor # # Bipolar Transistors, and Fairchild Semiconductor Bipolar Junction Transistor (BJT) board series provide complete solutions to meet various circuit application needs. Innovative packaging design is used to provide the smallest size, highest reliability, and maximum thermal performance.

Brand: Fairchild

Packaging TO-261-4

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(1127) Minimum order quantity(1)

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Technical parameters/frequency:	150 MHz
Technical parameters/rated voltage (DC):	11.0 V
Technical parameters/rated current:	1.50 A
Technical parameters/rated power:	1 W
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	1000 mW
Technical parameters/breakdown voltage (collector emitter):	110 V
Technical parameters/Maximum allowable collector current:	1.5A
Technical parameters/minimum current amplification factor (hFE):	2000 @1A, 5V
Technical parameters/rated power (Max):	1 W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/gain bandwidth:	150MHz (Min)
Technical parameters/dissipated power (Max):	1000 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	TO-261-4
Dimensions/Length:	6.5 mm
Dimensions/Width:	3.5 mm
Dimensions/Height:	1.6 mm
Dimensions/Packaging:	TO-261-4
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99

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	NZT605	Fairchild	功能相似	TO-261-4	NZT 系列 NPN 1000 mW 110 V 1.5 A 表面贴装达林顿晶体管 - SOT-223	PDF