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Description Small signal MOSFET -20 V, -430 mA, dual P-channel with ESD protection, SOT- 563 Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563
Product QR code
Packaging SOT-563
Delivery time
Packaging method Tape
Standard packaging quantity 1
0yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(7124) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-20.0 V

 

Technical parameters/rated current:

-430 mA

 

Technical parameters/drain source resistance:

1.00 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

250 mW

 

Technical parameters/Input capacitance:

175 pF

 

Technical parameters/gate charge:

2.50 nC

 

Technical parameters/drain source voltage (Vds):

20 V

 

Technical parameters/breakdown voltage of gate source:

±6.00 V

 

Technical parameters/Continuous drain current (Ids):

430 mA

 

Technical parameters/Input capacitance (Ciss):

175pF @16V(Vds)

 

Technical parameters/rated power (Max):

250 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SOT-563

 

Dimensions/Packaging:

SOT-563

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTZD3152PT1G NTZD3152PT1G ON Semiconductor 功能相似 SOT-563-6
20V,-430mA,双功率MOSFET
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