Technical parameters/rated voltage (DC): | -20.0 V |
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Technical parameters/rated current: | -430 mA |
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Technical parameters/drain source resistance: | 1.00 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 250 mW |
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Technical parameters/Input capacitance: | 175 pF |
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Technical parameters/gate charge: | 2.50 nC |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/breakdown voltage of gate source: | ±6.00 V |
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Technical parameters/Continuous drain current (Ids): | 430 mA |
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Technical parameters/Input capacitance (Ciss): | 175pF @16V(Vds) |
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Technical parameters/rated power (Max): | 250 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-563 |
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Dimensions/Packaging: | SOT-563 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTZD3152PT1G
|
ON Semiconductor | 功能相似 | SOT-563-6 |
20V,-430mA,双功率MOSFET
|
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