Technical parameters/rated voltage (DC): | -20.0 V |
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Technical parameters/rated current: | -430 mA |
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Technical parameters/number of pins: | 6 |
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Technical parameters/drain source resistance: | 0.9 Ω |
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Technical parameters/polarity: | P-Channel, Dual P-Channel |
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Technical parameters/dissipated power: | 280 mW |
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Technical parameters/threshold voltage: | 1 V |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/breakdown voltage of gate source: | ±6.00 V |
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Technical parameters/Continuous drain current (Ids): | 430 mA |
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Technical parameters/rise time: | 12 ns |
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Technical parameters/Input capacitance (Ciss): | 175pF @16V(Vds) |
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Technical parameters/rated power (Max): | 250 mW |
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Technical parameters/descent time: | 19 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 280 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-563-6 |
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Dimensions/Length: | 1.7 mm |
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Dimensions/Width: | 1.3 mm |
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Dimensions/Height: | 0.6 mm |
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Dimensions/Packaging: | SOT-563-6 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTZD3152PT5G
|
ON Semiconductor | 功能相似 | SOT-563 |
小信号MOSFET -20 V， -430毫安，双P通道带ESD保护， SOT- 563 Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563
|
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