Technical parameters/number of channels: | 1 |
|
Technical parameters/drain source resistance: | 5.5 mΩ |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 2.7 W |
|
Technical parameters/threshold voltage: | 1.7 V |
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Technical parameters/drain source voltage (Vds): | 40 V |
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Technical parameters/Leakage source breakdown voltage: | 40 V |
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Technical parameters/Continuous drain current (Ids): | 17A |
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Technical parameters/rise time: | 55 ns |
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Technical parameters/Input capacitance (Ciss): | 1570pF @25V(Vds) |
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Technical parameters/descent time: | 40 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2.7W (Ta), 33W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | WDFN-8 |
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Dimensions/Length: | 3.15 mm |
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Dimensions/Width: | 3.15 mm |
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Dimensions/Height: | 0.8 mm |
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Dimensions/Packaging: | WDFN-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NVTFS5811NLTAG
|
ON Semiconductor | 类似代替 | WDFN-8 |
N 通道功率 MOSFET，40V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
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