Technical parameters/halogen-free state: | Halogen Free |
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Technical parameters/number of channels: | 1 |
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Technical parameters/number of pins: | 8 |
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Technical parameters/drain source resistance: | 0.0058 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 3.2 W |
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Technical parameters/threshold voltage: | 2.2 V |
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Technical parameters/drain source voltage (Vds): | 40 V |
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Technical parameters/Leakage source breakdown voltage: | 40 V |
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Technical parameters/Continuous drain current (Ids): | 16A |
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Technical parameters/rise time: | 55 ns |
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Technical parameters/Input capacitance (Ciss): | 1570pF @25V(Vds) |
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Technical parameters/rated power (Max): | 3.2 W |
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Technical parameters/descent time: | 40 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 3.2W (Ta), 21W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | WDFN-8 |
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Dimensions/Length: | 3.15 mm |
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Dimensions/Width: | 3.15 mm |
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Dimensions/Height: | 0.75 mm |
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Dimensions/Packaging: | WDFN-8 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NVTFS5811NLWFTWG
|
ON Semiconductor | 类似代替 | WDFN-8 |
40V,40A,6.7mΩ,单N沟道功率MOSFET
|
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