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Model NTMD3P03R2G
Description ON SEMICONDUCTOR NTMD3P03R2G Field effect transistor, MOSFET, P-channel, -30V, SOIC
Product QR code
Brand: ON Semiconductor
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.97  yuan 3.97yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9289) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-30.0 V

 

Technical parameters/rated current:

-3.05 A

 

Technical parameters/number of channels:

2

 

Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.085 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

2 W

 

Technical parameters/threshold voltage:

1.7 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Leakage source breakdown voltage:

30 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

-3.05 A

 

Technical parameters/rise time:

16.0 ns

 

Technical parameters/Input capacitance (Ciss):

750pF @24V(Vds)

 

Technical parameters/rated power (Max):

730 mW

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2000 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Length:

5 mm

 

Dimensions/Width:

4 mm

 

Dimensions/Height:

1.5 mm

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF9335PBF IRF9335PBF Infineon 功能相似 SOIC-8
INFINEON IRF9335PBF 晶体管, MOSFET, P沟道, -5.4 A, -30 V, 48 mohm, -10 V, -1.8 V
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NTMD3P03R2 NTMD3P03R2 ON Semiconductor 类似代替 SOIC
功率MOSFET -3.05安培，伏特-30 Power MOSFET -3.05 Amps, -30 Volts
PDF

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