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Model NTMD3P03R2
Description Power MOSFET -3.05 Amps, Voltage-30 Power MOSFET -3.05 Amps, -30 Volts
Product QR code
Brand: ON Semiconductor
Packaging SOIC
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.54  yuan 0.54yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7530) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-30.0 V

 

Technical parameters/rated current:

-3.05 A

 

Technical parameters/drain source resistance:

85.0 mΩ

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

2.00 W

 

Technical parameters/drain source voltage (Vds):

30.0 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

3.05 A

 

Technical parameters/rise time:

16.0 ns

 

Technical parameters/Input capacitance (Ciss):

520pF @24V(Vds)

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2000 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC

 

Dimensions/Packaging:

SOIC

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTMD3P03R2G NTMD3P03R2G ON Semiconductor 类似代替 SOIC-8
ON SEMICONDUCTOR NTMD3P03R2G 场效应管, MOSFET, P沟道, -30V, SOIC
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