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Model NTGS3441T1
Description -3.05A,-30VPower MOSFET and Schottky diode
Product QR code
Brand: ON Semiconductor
Packaging SOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.36  yuan 0.36yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5075) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-20.0 V

 

Technical parameters/rated current:

-1.00 A

 

Technical parameters/drain source resistance:

90.0 mΩ

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

500mW (Ta)

 

Technical parameters/drain source voltage (Vds):

20 V

 

Technical parameters/breakdown voltage of gate source:

±8.00 V

 

Technical parameters/Continuous drain current (Ids):

1.65 A

 

Technical parameters/rise time:

23.5 ns

 

Technical parameters/Input capacitance (Ciss):

480pF @5V(Vds)

 

Technical parameters/rated power (Max):

500 mW

 

Technical parameters/dissipated power (Max):

500mW (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

SOT-23-6

 

Dimensions/Packaging:

SOT-23-6

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTGS3441T1G NTGS3441T1G ON Semiconductor 类似代替 SOT-23-6
1A,-20V,功率MOSFET
PDF

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