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Model NTGS3446T1

Description 5.1A,20VPower MOSFET

Brand: ON Semiconductor

Packaging SOT-23-6

Delivery time

Packaging method Cut Tape (CT)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	20.0 V
Technical parameters/rated current:	5.10 A
Technical parameters/drain source resistance:	36.0 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	500 mW
Technical parameters/drain source voltage (Vds):	20 V
Technical parameters/Leakage source breakdown voltage:	20.0 V
Technical parameters/breakdown voltage of gate source:	±12.0 V
Technical parameters/Continuous drain current (Ids):	2.50 A
Technical parameters/rise time:	12 ns
Technical parameters/Input capacitance (Ciss):	750pF @10V(Vds)
Technical parameters/descent time:	12 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	500mW (Ta)
Encapsulation parameters/installation method:	Surface Mount
Encapsulation parameters/Encapsulation:	SOT-23-6
Dimensions/Length:	3 mm
Dimensions/Width:	1.5 mm
Dimensions/Height:	0.94 mm
Dimensions/Packaging:	SOT-23-6
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Cut Tape (CT)
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with standards/lead standards:	Contains Lead