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Model NTGS1135PT1G
Description -4.6A,-8V,PChannel MOSFET
Product QR code
Brand: ON Semiconductor
Packaging SOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.96  yuan 1.96yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2305) Minimum order quantity(1)
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Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

970mW (Ta)

 

Technical parameters/drain source voltage (Vds):

8 V

 

Technical parameters/Continuous drain current (Ids):

4.60 A

 

Technical parameters/Input capacitance (Ciss):

2200pF @6V(Vds)

 

Technical parameters/rated power (Max):

970 mW

 

Technical parameters/dissipated power (Max):

970mW (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SOT-23-6

 

Dimensions/Packaging:

SOT-23-6

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTUD3170NZT5G NTUD3170NZT5G ON Semiconductor 功能相似 SOT-963-6
ON SEMICONDUCTOR NTUD3170NZT5G. 场效应管, MOSFET, 双N沟道, 20V, SOT-963

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