Technical parameters/rated voltage (DC): | 60.0 V |
|
Technical parameters/rated current: | 3.00 A |
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Technical parameters/drain source resistance: | 110 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 1.3W (Ta) |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Leakage source breakdown voltage: | 60.0 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 3.00 A |
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Technical parameters/rise time: | 14.0 ns |
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Technical parameters/Input capacitance (Ciss): | 455pF @25V(Vds) |
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Technical parameters/dissipated power (Max): | 1.3W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | TO-261-4 |
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Dimensions/Packaging: | TO-261-4 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTF3055-100T1G
|
ON Semiconductor | 类似代替 | TO-261-4 |
ON SEMICONDUCTOR NTF3055-100T1G 晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
|
||
NTF3055-160T1
|
ON Semiconductor | 类似代替 | TO-261-4 |
2A,60V功率MOSFET
|
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