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Model NTD4963N-35G
Description ON SEMICONDUCTOR NTD4963N-35G Transistor, MOSFET, N-channel, 44 A, 30 V, 0.0082 ohm, 10 V, 1.45 V
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Brand: ON Semiconductor
Packaging TO-251-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
1.31  yuan 1.31yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1671) Minimum order quantity(1)
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Technical parameters/number of pins:

4

 

Technical parameters/drain source resistance:

0.0082 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

35.7 W

 

Technical parameters/threshold voltage:

1.45 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

10A

 

Technical parameters/rise time:

20 ns

 

Technical parameters/Input capacitance (Ciss):

1035pF @12V(Vds)

 

Technical parameters/rated power (Max):

1.1 W

 

Technical parameters/descent time:

3 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

1.1W (Ta), 35.7W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

TO-251-3

 

Dimensions/Packaging:

TO-251-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Automation & Process Control, Computers & Computer Peripherals, Automation & Process Control, Power Management, , Computers & Computer Peripherals, Power Management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTD4810NH-35G NTD4810NH-35G ON Semiconductor 类似代替 TO-251-3
功率MOSFET的30 V ， 54 A单N沟道， DPAK / IPAK Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK
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