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Model NTD4810NH-35G
Description 30V, 54A Single N-channel, DPAK/IPAK Power MOSFET 30V, 54A, Single N-channel, DPAK/IPAK
Product QR code
Brand: ON Semiconductor
Packaging TO-251-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9243) Minimum order quantity(1)
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Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

1.28W (Ta), 50W (Tc)

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

10.8A

 

Technical parameters/Input capacitance (Ciss):

1225pF @12V(Vds)

 

Technical parameters/dissipated power (Max):

1.28W (Ta), 50W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Encapsulation parameters/Encapsulation:

TO-251-3

 

Dimensions/Packaging:

TO-251-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTD4963N-35G NTD4963N-35G ON Semiconductor 类似代替 TO-251-3
ON SEMICONDUCTOR NTD4963N-35G 晶体管, MOSFET, N沟道, 44 A, 30 V, 0.0082 ohm, 10 V, 1.45 V
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