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Model NST848BF3T5G

Description NPNNPN General Purpose Transistor

Brand: ON Semiconductor

Packaging SOT-1123-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/frequency:	100 MHz
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	347 mW
Technical parameters/breakdown voltage (collector emitter):	30 V
Technical parameters/Maximum allowable collector current:	0.1A
Technical parameters/minimum current amplification factor (hFE):	200 @2mA, 5V
Technical parameters/maximum current amplification factor (hFE):	200 @2mA, 5V
Technical parameters/rated power (Max):	290 mW
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	347 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-1123-3
Dimensions/Length:	0.6 mm
Dimensions/Width:	0.8 mm
Dimensions/Height:	0.37 mm
Dimensions/Packaging:	SOT-1123-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Minimum Packaging:	8000
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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