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Model NILMS4501NR2

Description Power MOSFET with Current Mirror FET

Brand: ON Semiconductor

Packaging DFN-4

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	24.0 V
Technical parameters/rated current:	9.50 A
Technical parameters/drain source resistance:	12.0 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	2.7 W
Technical parameters/drain source voltage (Vds):	24 V
Technical parameters/Leakage source breakdown voltage:	24.0 V
Technical parameters/breakdown voltage of gate source:	±10.0 V
Technical parameters/Continuous drain current (Ids):	9.50 A
Technical parameters/rise time:	15 ns
Technical parameters/Input capacitance (Ciss):	1500pF @6V(Vds)
Technical parameters/rated power (Max):	1.4 W
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	1.4W (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	DFN-4
Dimensions/Length:	6.2 mm
Dimensions/Width:	5.2 mm
Dimensions/Height:	1.9 mm
Dimensions/Packaging:	DFN-4
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Obsolete
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Contains Lead