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Model NILMS4501NR2G
Description 24V,9.5ANChannel with ESD protection 1:250 current mirror detection
Product QR code
Brand: ON Semiconductor
Packaging PLLP-4
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4562) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

24.0 V

 

Technical parameters/rated current:

9.50 A

 

Technical parameters/drain source resistance:

12.0 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

1.4W (Ta)

 

Technical parameters/drain source voltage (Vds):

24 V

 

Technical parameters/Leakage source breakdown voltage:

24.0 V

 

Technical parameters/breakdown voltage of gate source:

±10.0 V

 

Technical parameters/Continuous drain current (Ids):

9.50 A

 

Technical parameters/Input capacitance (Ciss):

1500pF @6V(Vds)

 

Technical parameters/dissipated power (Max):

1.4W (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

PLLP-4

 

Dimensions/Packaging:

PLLP-4

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
LMS LMS ON Semiconductor 功能相似 508AA
Power MOSFET with Current Mirror FET 24 V, 9.5 A, N-Channel, ESD Protected, 1:250 Current Mirror, QFN PLLP4 6.2x5.2x1.85mm, 2500-REEL
LMS LMS Vishay Semiconductor 功能相似 2
Power MOSFET with Current Mirror FET 24 V, 9.5 A, N-Channel, ESD Protected, 1:250 Current Mirror, QFN PLLP4 6.2x5.2x1.85mm, 2500-REEL
NILMS4501NR2 NILMS4501NR2 ON Semiconductor 功能相似 DFN-4
功率MOSFET，电流镜像FET Power MOSFET with Current Mirror FET
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