Technical parameters/rated voltage (DC): | 40.0 V |
|
Technical parameters/rated current: | 6.00 A |
|
Technical parameters/number of output interfaces: | 1 |
|
Technical parameters/drain source resistance: | 90.0 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 1.10 W |
|
Technical parameters/drain source voltage (Vds): | 40.0 V |
|
Technical parameters/Leakage source breakdown voltage: | 40.0 V |
|
Technical parameters/breakdown voltage of gate source: | ±16.0 V |
|
Technical parameters/Continuous drain current (Ids): | 6.00 A |
|
Technical parameters/output current (Max): | 6 A |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TO-261-4 |
|
Dimensions/Packaging: | TO-261-4 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NCV8405ASTT1G
|
ON Semiconductor | 类似代替 | TO-261-4 |
NCV8405 系列 单通道 9 A 90 mOhm 自保护 低压侧 驱动器 - SOT-223-4
|
||
NCV8405ASTT3G
|
ON Semiconductor | 完全替代 | TO-261-4 |
与温度和电流限制自保护低端驱动器 Self-Protected Low Side Driver with Temperature and Current Limit
|
||
NIF62514T1G
|
ON Semiconductor | 类似代替 | TO-261-4 |
自我保护FET的温度和电流限制 Self−protected FET with Temperature and Current Limit
|
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