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Model NIF62514T1G

Description Self protected FET with Temperature and Current Limit

Brand: ON Semiconductor

Packaging TO-261-4

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	40.0 V
Technical parameters/rated current:	6.00 A
Technical parameters/number of output interfaces:	1
Technical parameters/drain source resistance:	0.09 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	1.1 W
Technical parameters/threshold voltage:	1.7 V
Technical parameters/drain source voltage (Vds):	40 V
Technical parameters/Leakage source breakdown voltage:	40.0 V
Technical parameters/breakdown voltage of gate source:	±16.0 V
Technical parameters/Continuous drain current (Ids):	6.00 A
Technical parameters/output current (Max):	6 A
Technical parameters/operating temperature (Max):	150 ℃
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	TO-261-4
Dimensions/Packaging:	TO-261-4
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17
Customs information/ECCN code:	EAR99

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