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Model NDS335N
Description NN-channel Logic Level Enhancement Mode Field Effect Transistor
Product QR code
Brand: Fairchild
Packaging SOT-23-3
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
1.23  yuan 1.23yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5086) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

20.0 V

 

Technical parameters/rated current:

1.70 A

 

Technical parameters/drain source resistance:

140 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

0.5 W

 

Technical parameters/drain source voltage (Vds):

20 V

 

Technical parameters/Leakage source breakdown voltage:

20.0 V

 

Technical parameters/breakdown voltage of gate source:

8.00 V

 

Technical parameters/Continuous drain current (Ids):

1.70 A

 

Technical parameters/rise time:

29 ns

 

Technical parameters/Input capacitance (Ciss):

240pF @10V(Vds)

 

Technical parameters/rated power (Max):

460 mW

 

Technical parameters/descent time:

29 ns

 

Technical parameters/dissipated power (Max):

500mW (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23-3

 

Dimensions/Packaging:

SOT-23-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Cut Tape (CT)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
AO3418 AO3418 ETC 功能相似 SOT-23-3
30V,3.8A,N沟道MOSFET
PDF
AO3418 AO3418 Alpha 功能相似
30V,3.8A,N沟道MOSFET
PDF
NDS335N_NL NDS335N_NL Fairchild 类似代替 SOT-23-3
MOSFET N-CH 20V 1.7A SSOT3

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