Technical parameters/polarity: | N-CH |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Continuous drain current (Ids): | 1.7A |
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Technical parameters/Input capacitance (Ciss): | 240pF @10V(Vds) |
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Technical parameters/rated power (Max): | 460 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NDS335N
|
National Semiconductor | 类似代替 | SOT-23 |
N沟道逻辑电平增强模式场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
||
NDS335N
|
Fairchild | 类似代替 | SOT-23-3 |
N沟道逻辑电平增强模式场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
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