Technical parameters/polarity: | N-CH |
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Technical parameters/drain source voltage (Vds): | 600 V |
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Technical parameters/Continuous drain current (Ids): | 0.3A |
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Technical parameters/rise time: | 6 ns |
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Technical parameters/Input capacitance (Ciss): | 170pF @25V(Vds) |
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Technical parameters/descent time: | 8 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-223 |
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Dimensions/Packaging: | SOT-223 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STN1HNK60
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN1HNK60 功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
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