Chip AI consultant
Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/rise time: | 10 ns |
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Technical parameters/Input capacitance (Ciss): | 525pF @15V(Vds) |
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Technical parameters/rated power (Max): | 900 mW |
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Technical parameters/descent time: | 10 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOP-8 |
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Dimensions/Packaging: | SOP-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS9926A
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Fairchild | 类似代替 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS9926A 双路场效应管, MOSFET, 双N沟道, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
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Kexin | 类似代替 | SOP-8 |
FAIRCHILD SEMICONDUCTOR SI4435DY. 晶体管, MOSFET, P沟道, -8.8 A, -30 V, 15 mohm, -10 V, -1.7 V
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SI4435DY
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Freescale | 类似代替 |
FAIRCHILD SEMICONDUCTOR SI4435DY. 晶体管, MOSFET, P沟道, -8.8 A, -30 V, 15 mohm, -10 V, -1.7 V
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Vishay Semiconductor | 类似代替 |
FAIRCHILD SEMICONDUCTOR SI4435DY. 晶体管, MOSFET, P沟道, -8.8 A, -30 V, 15 mohm, -10 V, -1.7 V
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