Technical parameters/rated voltage (DC): | -20.0 V |
|
Technical parameters/rated current: | -3.80 A |
|
Technical parameters/drain source resistance: | 70.0 mΩ |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 2.00 W |
|
Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/Continuous drain current (Ids): | 3.80 A |
|
Technical parameters/Input capacitance (Ciss): | 1120pF @10V(Vds) |
|
Technical parameters/rated power (Max): | 900 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Packaging: | SOIC-8 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTMD4N03R2G
|
ON Semiconductor | 功能相似 | SOIC-8 |
N 通道 MOSFET,ON Semiconductor ### MOSFET 晶体管,ON Semiconductor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review