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Model MRF5S9080NBR1
Description MOSFET RF N-CH 26V 80W TO-272-4
Product QR code
Brand: Freescale
Packaging TO-272
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
253.75  yuan 253.75yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8863) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

26.0 V

 

Technical parameters/rated current:

2.00 A

 

Technical parameters/halogen-free state:

Halogen Free

 

Technical parameters/drain source voltage (Vds):

26.0 V

 

Technical parameters/output power:

80.0 W

 

Technical parameters/gain:

18.5 dB

 

Technical parameters/output power (Max):

36 W

 

Encapsulation parameters/installation method:

Flange

 

Package parameters/number of pins:

5

 

Encapsulation parameters/Encapsulation:

TO-272

 

Dimensions/Packaging:

TO-272

 

Other/Product Lifecycle:

Not Recommended for New Designs

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MRF5S9080NBR1 MRF5S9080NBR1 NXP 类似代替 TO-272
Trans RF MOSFET N-CH 65V 5Pin TO-272W T/R
PDF
MRF5S9080NBR1 MRF5S9080NBR1 Freescale 类似代替 TO-272
Trans RF MOSFET N-CH 65V 5Pin TO-272W T/R
PDF
MRFE6P3300HR3 MRFE6P3300HR3 Freescale 功能相似 NI-860C3
RF Power Transistor,470 to 860MHz, 300W, Typ Gain in dB is 20.4 @ 860MHz, 32V, LDMOS, SOT1856
PDF
MRFE6P3300HR3 MRFE6P3300HR3 NXP 功能相似 NI-860C3
RF Power Transistor,470 to 860MHz, 300W, Typ Gain in dB is 20.4 @ 860MHz, 32V, LDMOS, SOT1856
PDF

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