Technical parameters/power supply voltage (DC): | 3.30 V, 3.60 V (max) |
|
Technical parameters/memory capacity: | 1000000000 B |
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Technical parameters/power supply voltage: | 2.7V ~ 3.6V |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TSOP-48 |
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Dimensions/Packaging: | TSOP-48 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ (TA) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tray |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Micron | 完全替代 | TSOP |
NAND闪存 2.7-3.6V 1G (128Mx8)
|
||
NAND01GW3B2AN6E
|
ST Microelectronics | 完全替代 | TSOP-48 |
NAND闪存 2.7-3.6V 1G (128Mx8)
|
||
NAND01GW3B2BN6E
|
Micron | 功能相似 | TSOP |
IC, FLASH NAND 1GB, SMD, TSOP48; Memory Configuration: 128M x 8Bit; Access Time: 25µs; Supply Voltage Range: 2.7V to ...
|
||
NAND01GW3B2BN6E
|
Numonyx | 功能相似 | TSOP |
IC, FLASH NAND 1GB, SMD, TSOP48; Memory Configuration: 128M x 8Bit; Access Time: 25µs; Supply Voltage Range: 2.7V to ...
|
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